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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D252
BGD712 750 MHz, 18.5 dB gain power doubler amplifier
Product specification Supersedes data of 2001 Oct 29 2001 Nov 02
Philips Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler amplifier
FEATURES * Excellent linearity * Extremely low noise * Excellent return loss properties * Silicon nitride passivation * Rugged construction * Gold metallization ensures excellent reliability. APPLICATIONS * CATV systems operating in the 40 to 750 MHz frequency range. DESCRIPTION
Side view
MSA319
BGD712
PINNING - SOT115J PIN 1 2, 3 5 7, 8 9 input common +VB common output DESCRIPTION
handbook, halfpage
1
2
3
5
7
8
9
Hybrid amplifier module in a SOT115J package operating with a voltage supply of 24 V (DC).
Fig.1 Simplified outline.
QUICK REFERENCE DATA SYMBOL Gp Itot power gain total current consumption (DC) PARAMETER CONDITIONS f = 45 MHz f = 750 MHz VB = 24 V MIN. 18.2 19 380 MAX. 18.8 20 410 UNIT dB dB mA
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VB Vi Tstg Tmb supply voltage RF input voltage storage temperature operating mounting base temperature PARAMETER - - -40 -20 MIN. MAX. 30 70 +100 +100 V dBmV C C UNIT
2001 Nov 02
2
Philips Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler amplifier
CHARACTERISTICS Bandwidth 40 to 750 MHz; VB = 24 V; Tmb = 35 C; ZS = ZL = 75 SYMBOL Gp SL FL PARAMETER power gain slope straight line flatness straight line f = 45 MHz f = 750 MHz f = 45 to 750 MHz; note 1 f = 45 to 100 MHz f = 100 to 700 MHz f = 700 to 750 MHz S11 input return losses f = 45 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz f = 550 to 650 MHz f = 650 to 750 MHz f = 750 to 790 MHz S22 output return losses f = 45 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz f = 550 to 650 MHz f = 650 to 750 MHz f = 750 to 790 MHz S21 CTB phase response composite triple beat f = 50 MHz 112 channels flat; Vo = 44 dBmV; fm = 745.25 MHz 79 channels flat; Vo = 44 dBmV; fm = 547.25 MHz 79 channels; fm = 445.25 MHz; Vo = 49.3 dBmV at 547 MHz; note 2 Xmod cross modulation 112 channels flat; Vo = 44 dBmV; fm = 55.25 MHz 79 channels flat; Vo = 44 dBmV; fm = 55.25 MHz 79 channels; fm = 745.25 MHz; Vo = 49.3 dBmV at 547 MHz; note 2 CONDITIONS MIN. 18.2 19 0.5 - - - 23 23 21 20 20 19 17 23 23 20 20 19 19 17 -45 - - - - - - TYP. 18.5 19.5 1 - - - - - - - - - - - - - - - - - - - - - - - -
BGD712
MAX. 18.8 20 1.5 0.35 0.5 0.15 - - - - - - - - - - - - - - +45 -62 -68 -63 -63 -69 -60
UNIT dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB deg dB dB dB dB dB dB
2001 Nov 02
3
Philips Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler amplifier
BGD712
SYMBOL CSO
PARAMETER composite second order distortion
CONDITIONS 112 channels flat; Vo = 44 dBmV; fm = 746.5 MHz 79 channels flat; Vo = 44 dBmV; fm = 548.5 MHz 79 channels; fm = 746.5 MHz; Vo = 49.3 dBmV at 547 MHz; note 2
MIN. - - - - 64 - - - 380
TYP. - - - - - - - - 395
MAX. -63 -68 -62 -74 - 5.5 5.5 7 410
UNIT dB dB dB dB dBmV dB dB dB mA
d2 Vo NF
second order distortion output voltage noise figure
note 3 dim = -60 dB; note 4 f = 50 MHz f = 550 MHz f = 750 MHz
Itot Notes
total current consumption (DC)
note 5
1. Slope straight line is defined as gain at 750 MHz - gain at 45 MHz. 2. Tilt = 7.3 dB (55 to 547 MHz). 3. fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp + fq = 746.5 MHz. 4. Measured according to DIN45004B: fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo -6 dB; fr = 749.25 MHz; Vr = Vo -6 dB; measured at fp + fq - fr = 738.25 MHz. 5. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
2001 Nov 02
4
Philips Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler amplifier
BGD712
handbook, halfpage
-50
MCD842
56 Vo (dBmV)
(1)
handbook, halfpage
-50
MCD843
56 Vo (dBmV)
(1) (2) (3) (4)
CTB (dB) -60
Xmod (dB) -60
52
52
-70
48
-70
48
-80
(2) (3) (4) 44
-80
44
-90
0
200
400
600
f (MHz)
40 800
-90
0
200
400
600
f (MHz)
40 800
ZS = ZL = 75 ; VB = 24 V; 79 channels; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 .
ZS = ZL = 75 ; VB = 24 V; 79 channels; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 .
Fig.2
Composite triple beat as a function of frequency under tilted conditions.
Fig.3
Cross modulation as a function of frequency under tilted conditions.
handbook, halfpage
-50
MCD844
56 Vo (dBmV)
(1)
CSO (dB) -60
52
(2)
-70
(3)
48
-80
44
(4)
-90
0
200
400
600
f (MHz)
40 800
ZS = ZL = 75 ; VB = 24 V; 79 channels; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. -3 .
Fig.4
Composite second order distortion as a function of frequency under tilted conditions. 5
2001 Nov 02
Philips Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler amplifier
PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
BGD712
SOT115J
D E Z p
A2 1 A L F S W d U2 B yMB p Q e e1 q2 q1 yMB yMB b wM 2 3 5 7 8 9
c
U1
q
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. 9.1 b c d D E max. max. max. e e1 F L min. 8.8 p 4.15 3.85 Q max. 2.4 q q1 q2 S U1 U2 max. 8 W w y 0.1 Z max. 3.8
mm 20.8
0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 0.38
38.1 25.4 10.2
4.2 44.75
6-32 0.25 UNC
OUTLINE VERSION SOT115J
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-02-06
2001 Nov 02
6
Philips Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler amplifier
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
BGD712
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 Nov 02
7
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613518/04/pp8
Date of release: 2001
Nov 02
Document order number:
9397 750 09028

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